Semiconductor device and method of manufacturing the same
AssigneeElpida Memory, Inc.
InventorsHiroyuki Fujimoto, Yuki Togashi
Life of this patent
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Abstract
A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.
Claims20
A semiconductor device, comprising:
- a monocrystalline substrate;
- an inter-layer film formed on the monocrystalline substrate;
- a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate;
- a sidewall formed on an inner surface of the contact hole;
- a plurality of first monocrystalline layers which fill the contact hole and cover the inter-layer film;
- and
- a plurality of second monocrystalline layers which include more defects than those included in the first monocrystalline layers and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.
A method of manufacturing a semiconductor device, comprising:
- preparing a monocrystalline substrate;
- forming an inter-layer film on the monocrystalline substrate;
- forming a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate;
- forming a first sidewall covering an inner surface of the contact hole;
- forming a second sidewall covering the first sidewall;
- forming a first monocrystalline layer on the partially-exposed upper surface of the monocrystalline substrate by epitaxial growth;
- removing a portion of the second sidewall in contact with the monocrystalline substrate and the first monocrystalline layer by annealing in a reduced atmosphere;
- and
- forming, by repeating the epitaxial growth and the annealing in this order multiple times, a plurality of first monocrystalline layers filling the contact hole and covering the inter-layer film, and a plurality of second monocrystalline layers including more defects than those included in the first monocrystalline layers and covering the first sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film, the second sidewall being removed and replaced with the second monocrystalline layers.
Dependencies are inferred from the claim text.