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US 7,888,731 B2Granted
Memory devices and methods of forming and operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorJae-Ho Kim
Life of this patent
Estimating the term…
Abstract
A memory device, including a first ground selection transistor, a first string selection transistor, and first memory cell transistors disposed in series between the first ground selection transistor and the first string selection transistor, wherein the first ground selection transistor and the first memory cell transistors have a same structure. A method of programming the memory device may include programming the ground selection transistor before programming the memory cell.
Claims7
A memory device, comprising:
- a first ground selection transistor;
- a first string selection transistor;
- and
- first memory cell transistors disposed in series between the first ground selection transistor and the first string selection transistor, wherein the first ground selection transistor and the first memory cell transistors have a same structure.
1 more element
Dependencies are inferred from the claim text.