Back to results
US 7,888,726 B2Granted
Capacitor for semiconductor device
AssigneeElpida Memory, Inc.
InventorsToshiyuki Hirota, Masami Tanioku
Life of this patent
Estimating the term…
Abstract
A capacitor for a semiconductor device having a dielectric film between an upper electrode and a lower electrode is featured in that the dielectric film includes an alternately laminated film of hafnium oxide and titanium oxide at an atomic layer level.
Claims29
A capacitor for a semiconductor device comprising an upper electrode, a lower electrode and a dielectric film therebetween, wherein the dielectric film comprises an alternately laminated film of hafnium oxide and titanium oxide at an atomic layer level.
A method for manufacturing a capacitor for a semiconductor device comprising:
- (1) forming a lower electrode;
- (2) alternately laminating hafnium oxide and titanium oxide at an atomic layer level on the lower electrode by an atomic layer deposition (ALD) method;
- and
- (3) forming an upper electrode.
1 more element
Dependencies are inferred from the claim text.