Pixel structure of solid-state image sensor

A pixel structure of a solid-state image sensor that performs charge storage while distributing electrons generated by photoelectric conversion, said structure comprising:

• a plurality of photodiodes that generate electrons by photoelectric conversion;
• a plurality of charge-storage sections that store electrons generated in each of the plurality of photodiodes wherein at least two of said plurality of charge storage sections are arranged to store electrons generated by each photodiode;
• and
• a gate structure that is arranged adjacently between each photodiode and said plurality of charge-storage sections and controls transfer of electrons generated in said photodiode to said plurality of charge-storage sections,
• wherein said gate structure is made up of two stages of gates, and said two stages of gates comprise:
• a first stage gate arranged adjacent to said photodiode and controls readout of electrons generated in said photodiode;
• and
• a plurality of second stage gates, each of which is arranged adjacent to said first stage gate with a predetermined gap between the first stage gate and each of said plurality of charge-storage sections, and each of which performs control of distributing electrons read out by the first stage gate readout control to said plurality of charge-storage sections, respectively.

A solid-state image sensor structure that performs charge storage while distributing electrons generated by photoelectric conversion, said structure comprising:

• a plurality of photodiodes that generate electrons by photoelectric conversion;
• a plurality of charge-storage sections that store electrons generated in each of the plurality of photodiodes, wherein at least two of said plurality of charge storage sections are arranged to store electrons generated by each photodiode;
• and
• a gate structure that is arranged adjacently between each photodiode and said plurality of charge-storage sections and controls transfer of electrons generated in each photodiode to said plurality of charge-storage sections,
• wherein said gate structure is made up of three stages of gates, comprise:
• a first stage gate, which is arranged adjacent to said photodiode and controls readout of electrons generated in said photodiode;
• a second stage gate that is arranged adjacent to said first stage gate with a predetermined gap, and between said first stage gate and said plurality of charge storage sections, and which controls movement of electrons read out by the first stage gate readout control to said plurality of charge-storage sections;
• and
• a plurality of third stage gates, each of which is arranged adjacent to said second stage gate with a predetermined gap, and is arranged corresponding to each of said plurality of charge-storage sections, respectively, and which perform control of distributing electrons moved by movement control of said second stage gate to said plurality of charge-storage sections, respectively.

A solid-state image sensor structure, which performs charge storage while distributing electrons generated by photoelectric conversion, said structure comprising:

• a plurality of photodiodes that generate electrons by photoelectric conversion;
• a plurality of charge-storage sections that store electrons generated in each of the plurality of photodiodes, wherein at least two of said plurality of charge storage sections are arranged to store electrons generated by each photodiode;
• and
• a gate structure that is arranged adjacently between each photodiode and said plurality of charge-storage sections and controls transfer of electrons generated in each photodiode to said plurality of charge-storage sections,
• wherein said gate structure is made up of plural stages of gates, and
• said plural stages of gates at least have:
• one front stage gate that is arranged adjacent to said photodiode and controls readout of electrons generated in said photodiode;
• and
• another stage gate that is arranged adjacent to said plurality of charge-storage sections on a side of said front stage gate, and comprises a plurality of gates, each of which is arranged adjacent to said front stage gate with a predetermined gap, corresponding to each of said plurality of charge-storage sections, respectively and which perform control of distributing electrons read out by a front stage gate readout control to said plurality of charge-storage sections, respectively.