Active pixel sensor with coupled gate transfer transistor

A shared structure active pixel sensor array with a plurality of complementary metal-oxide semiconductor (CMOS) active pixel sensors, the shared structure active pixel sensor array comprising:

• a plurality of photodiodes disposed to generate electric charges responding to incident light;
• a plurality of transfer transistors disposed to transfer the electric charges integrated in the photodiodes to a floating diffusion node, wherein each of the transfer transistors have a first transfer gate and a second transfer gate, and the first and second transfer gates are configured as a coupled gate structure;
• a reset transistor disposed to reset a potential level of the floating diffusion node by a given voltage level;
• and
• a signal transfer circuit disposed to transfer the potential level of the floating diffusion node to an internal circuit in response to a selection signal,
• wherein each of the transfer transistors is disposed to bootstrap a voltage of the second transfer gate by using a voltage coupling effect between the first transfer gate and the second transfer gate before transfers the electric charges integrated in the photodiode to the floating diffusion node,
• wherein the first transfer gate is disposed over an entire channel region, and
• wherein the second transfer gate is disposed over at least a portion of the first transfer gate and at least a portion of the floating diffusion node.