Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate having an insulating surface;
• a light sensor element over the insulating surface, the light sensor element comprising a first electrode, a second electrode, and a photoelectric conversion layer;
• a wire electrically connected to the first electrode;
• and
• an amplifier circuit including a TFT, the amplifier circuit over the insulating surface,
• wherein the TFT includes a source electrode, a drain electrode, and a gate electrode,
• wherein the gate electrode of the TFT is electrically connected to the wire,
• wherein the wire is covered with the first electrode,
• wherein the second electrode is provided over the photoelectric conversion layer,
• wherein end portions of a top surface of the second electrode extend beyond end portions of the photoelectric conversion layer, and
• wherein the first electrode is a film containing Ti.

A semiconductor device comprising:

• a substrate having an insulating surface;
• a light sensor element over the insulating surface;
• and
• an amplifier circuit over the insulating surface,
• wherein the amplifier circuit comprises an n-channel TFT having a semiconductor film having a crystalline structure, and
• wherein the light sensor element includes a wire connected to the n-channel TFT, a photoelectric conversion layer over the wire, and an electrode on the photoelectric conversion layer, and an end portion of the electrode projects beyond an end portion of the photoelectric conversion layer.

A semiconductor device comprising:

• a small piece of a substrate having an insulating surface;
• a light sensor element over the insulating surface;
• and
• an amplifier circuit over the insulating surface,
• an interlayer insulating film over the thin film transistor;
• a wire connected to the thin film transistor over the interlayer insulating film;
• a photoelectric conversion layer formed over a part of the wire;
• and
• an electrode over the photoelectric conversion layer,
• wherein an end portion of the electrode projects than an end portion of the photoelectric conversion layer.