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US 7,888,710 B2Granted
CMOS fabrication process utilizing special transistor orientation
AssigneeIntel Corporation
InventorsMark Armstrong, Gerhard Schrom, Sunit Tyagi, Paul A. Packan, Kelin J. Kuhn, Scott Thompson
Life of this patent
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Abstract
Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.
Claims12
An integrated circuit comprising:
- an n-type metal oxide semiconductor (NMOS) device formed on a semiconductor substrate;
- a p-type metal oxide semiconductor (PMOS) device formed on the semiconductor substrate, wherein the NMOS device and the PMOS device are oriented so that the current flows in a <100>direction of the semiconductor substrate;
- and
- a stressor to apply a stress to the semiconductor substrate to create a first longitudinal tensile stress on a channel of the NMOS device and to create a second longitudinal tensile stress on a channel of the PMOS device, wherein the first longitudinal tensile stress is the same as the second longitudinal tensile stress.
1 more element
An apparatus comprising:
- a semiconductor substrate formed from {100} silicon;
- a p-type metal oxide semiconductor (PMOS) transistor formed on the semiconductor substrate, the PMOS transistor having a PMOS channel for carrying current and oriented so that current flows in a <100> direction;
- an n-type metal oxide semiconductor (NMOS) transistor formed on said semiconductor substrate, said NMOS transistor having a NMOS channel for carrying current and oriented so that current flows in a <100> direction;
- and
- a stressor to apply a stress to the semiconductor substrate to create a first longitudinal tensile stress on a channel of the NMOS device and to create a second longitudinal tensile stress on a channel of the PMOS device, wherein the first longitudinal tensile stress is the same as the second longitudinal tensile stress.
2 more elements
Dependencies are inferred from the claim text.