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US 7,888,696 B2Granted
Semiconductor light emitting device and a method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorDae Sung Kang
Life of this patent
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Abstract
Disclosed is a semiconductor light emitting device comprising a reflective structure layer comprising a dopant layer and a roughness layer, a first conductive semiconductor layer on the reflective structure layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
Claims20
A semiconductor light emitting device comprising:
- a reflective structure layer comprising a dopant layer and a roughness layer;
- a first conductive semiconductor layer on the reflective structure layer;
- an active layer on the first conductive semiconductor layer;
- and
- a second conductive semiconductor layer on the active layer.
2 more elements
A semiconductor light emitting device comprising:
- a first nitride semiconductor layer;
- a first reflective structure layer comprising a dopant layer and a roughness layer, which comprises a concave-convex shape, on the first nitride semiconductor layer;
- a first conductive semiconductor layer on the first reflective structure layer;
- an active layer on the first conductive semiconductor layer;
- and
- a second conductive semiconductor layer on the active layer.
3 more elements
Dependencies are inferred from the claim text.