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US 7,888,693 B2Granted
Semiconductor light emitting device and method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorsTae Yun Kim, Hyo Kun Son
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
Claims14
A semiconductor light emitting device, comprising:
- a n-type semiconductor layer including a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1);
- a delta-doped layer on the n-type semiconductor layer;
- an undoped semiconductor layer on the delta-doped layer;
- an active layer on the undoped semiconductor layer;
- and
- a p-type semiconductor layer on the active layer and including a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≦X≦1, 0≦y≦1, 0≦x+y≦1).
3 more elements
A semiconductor light emitting device, comprising
- a n-type semiconductor layer including a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1);
- a delta-doped layer on the n-type semiconductor layer;
- a super lattice layer on the delta-doped layer;
- an undoped semiconductor layer on the super lattice layer;
- an active layer on the undoped semiconductor layer;
- and
- a p-type semiconductor layer on the active layer and including a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≦X≦1, 0≦y≦1, 0≦x+y≦1).
4 more elements
A semiconductor light emitting device, comprising:
- a n-type semiconductor layer including a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1);
- a delta-doped layer on the n-type semiconductor layer;
- an undoped semiconductor layer on the delta-doped layer;
- an active layer on the undoped semiconductor layer;
- and
- a p-type AlGaN semiconductor layer on the active layer;
- a p-type semiconductor layer on the p-type AlGaN semiconductor layer and including a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≦X≦1, 0≦y≦1, 0≦x+y≦1).
4 more elements
Dependencies are inferred from the claim text.