Light source including a wavelength-converted semiconductor light emitting device and a filter

A structure comprising:

• at least one light source 20 comprising a semiconductor light emitting device;
• a first filter layer 26 disposed over the at least one light source, wherein the first filter layer comprises:
• a plurality of first pixel locations, wherein at each first pixel location the first filter is adapted to transmit light at a first peak wavelength and absorb light at second and third peak wavelengths;
• a plurality of second pixel locations, wherein at each second pixel location the first filter is adapted to transmit light at the second peak wavelength and absorb light at the first and third peak wavelengths;
• and
• a plurality of third pixel locations, wherein at each third pixel location the first filter is adapted to transmit light at the third peak wavelength and absorb light at the first and second peak wavelengths;
• a liquid crystal layer 28 disposed over the first filter layer;
• and
• a second filter layer 40 disposed between the at least one light source and the first filter layer, wherein the second filter layer is adapted to transmit light at the first, second, and third peak wavelengths and reflect light at a fourth peak wavelength.