Electrode for semiconductor light emitting device
AssigneeShowa Denko K.K.
InventorHisayuki Miki
Life of this patent
Estimating the term…
Abstract
An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN-based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.
Claims21
An electrode for a semiconductor light emitting device, wherein the semiconductor light emitting device has a structure with an n-type or p-type first electrode and an opposing second p-type or n-type electrode of opposite polarity on the same side of the light emitting device, wherein each of said first and second electrodes comprises a bonding pad formed on a transparent conductive layer;
- characterized by having a flat shape wherein the transparent conductive layer of the opposing second electrode surrounds all of the perimeter of the transparent conductive layer of the first electrode;
- and characterized in that a portion of the bonding pad of the opposing second electrode is formed on the transparent conductive layer of the second electrode while the remainder is formed on a semiconductor layer of the semiconductor light emitting device.
Dependencies are inferred from the claim text.