High purity silicon carbide structures
AssigneeMEMC Electronic Materials, Inc.
InventorsLarry Wayne Shive, Brian Lawrence Gilmore
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Abstract
Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.
Claims28
A high purity silicon carbide structure suitable for use in high temperature silicon wafer manufacturing, the structure being a silicon carbide coated silicon carbide substrate and consisting essentially of silicon carbide, the structure having a denuded zone, the denuded zone extending from the outer surface of the silicon carbide structure to a distance of from about 5 micrometers to about 25 micrometers inward and comprising no more than about 1×1012 atoms of iron/cm3.
Dependencies are inferred from the claim text.