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US 7,888,684 B2Granted
Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide
AssigneeCanon Kabushiki Kaisha
InventorsTomoyuki Oike, Tatsuya Iwasaki, Toru Den
Life of this patent
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Abstract
There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.
Claims9
A light emitting device, comprising:
- a pair of electrodes;
- a light emitter placed between the electrodes;
- and
- a semiconductor laminated to be adjacent to the light emitter,
- wherein the semiconductor includes one of a chalcopyrite and an oxychalcogenide,
- wherein a constituent material of the light emitter is represented by ZnS:A (acceptor), D (donor), and at least one material is selected from Au, Ag, Cu, N, O, S, Se, and Te for the A (acceptor), and at least one material is selected from Al, Ga, In, F, Cl, Br, I, O, S, Se, and Te for the D (donor),
- wherein the chalcopyrite is represented by a I-III-VI2 type, and a group I material thereof is selected from Cu and Ag, a group III material thereof is selected from Al, Ga, and In, and a group VI material thereof is selected from S, Se, and Te, and
- wherein the at least one material corresponding to the A (acceptor) and the at least one material D (donor) are diffused from the chalcopyrite or the oxychalcogenide due to a heat treatment.
5 more elements
Dependencies are inferred from the claim text.