US 7,888,681 B2Granted

Display device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsShunpei Yamazaki, Yasuyuki Arai, Yukie Suzuki, Yoshiyuki Kurokawa

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Abstract

A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.

Claims23

Dependent claims

A display device comprising:

an n-channel thin film transistor comprising:
a first gate electrode;
a first gate insulating film formed over the first gate electrode;
a first microcrystalline semiconductor film formed over the first gate insulating film;
a first buffer layer formed over the first microcrystalline semiconductor film;
a pair of n-type semiconductor films formed over the first buffer layer;
and
a pair of first wirings formed over the pair of n-type semiconductor films;
and
a p-channel thin film transistor comprising:
a second gate electrode;
a second gate insulating film formed over the second gate electrode;
a second microcrystalline semiconductor film formed over the second gate insulating film;
a second buffer layer formed over the second microcrystalline semiconductor film;
a pair of p-type semiconductor films formed over the second buffer layer;
and
a pair of second wirings formed over the pair of p-type semiconductor films,
wherein the first microcrystalline semiconductor film and the second microcrystalline semiconductor film each contain oxygen at a concentration of 1×1016 atoms/cm3 or less,
wherein the pair of n-type semiconductor films include amorphous semiconductor or microcrystalline semiconductor, and
wherein the pair of p-type semiconductor films include amorphous semiconductor or microcrystalline semiconductor.

17 more elements

A display device comprising:

an n-channel thin film transistor comprising:
a first gate electrode;
a first gate insulating film formed over the first gate electrode;
a first microcrystalline semiconductor film formed over the first gate insulating film;
a first buffer layer formed over the first microcrystalline semiconductor film;
a pair of n-type semiconductor films formed over the first buffer layer;
a first conductive layer formed over the pair of n-type semiconductor films;
and
a pair of first wirings formed over the first conductive layer;
and
a p-channel thin film transistor comprising:
a second gate electrode;
a second gate insulating film formed over the second gate electrode;
a second microcrystalline semiconductor film formed over the second gate insulating film;
a second buffer layer formed over the second microcrystalline semiconductor film;
a pair of p-type semiconductor films formed over the second buffer layer;
and
a pair of second wirings formed over the pair of p-type semiconductor films,
wherein the first microcrystalline semiconductor film and the second microcrystalline semiconductor film each contain oxygen at a concentration of 1×1016 atoms/cm3 or less,
wherein the pair of n-type semiconductor films include amorphous semiconductor or microcrystalline semiconductor, and
wherein the pair of p-type semiconductor films include amorphous semiconductor or microcrystalline semiconductor.

18 more elements

A display device comprising:

an n-channel thin film transistor comprising:
a first gate electrode;
a first gate insulating film formed over the first gate electrode;
a first microcrystalline semiconductor film formed over the first gate insulating film;
a first buffer layer formed over the first microcrystalline semiconductor film;
a pair of n-type semiconductor films formed over the first buffer layer;
and
a pair of first wirings formed over the pair of n-type semiconductor films;
and
a p-channel thin film transistor comprising:
a second gate electrode;
a second gate insulating film formed over the second gate electrode;
a second microcrystalline semiconductor film formed over the second gate insulating film;
a second buffer layer formed over the second microcrystalline semiconductor film;
a pair of p-type semiconductor films formed over the second buffer layer;
a second conductive layer formed over the pair of p-type semiconductor films;
and
a pair of second wirings formed over the second conductive layer,
wherein the first microcrystalline semiconductor film and the second microcrystalline semiconductor film each contain oxygen at a concentration of 1×1016 atoms/cm3 or less,
wherein the pair of n-type semiconductor films include amorphous semiconductor or microcrystalline semiconductor, and
wherein the pair of p-type semiconductor films is amorphous semiconductor film or microcrystalline semiconductor film.

18 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/222,672Filed 14 Aug 2008
Priority: JP 2007-21305517 Aug 2007
Published: US 2009/0045409 A119 Feb 2009
Granted: 15 Feb 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 86/0231
Of multiple TFTs: using masks, e.g. half-tone masks
H10D 30/6757
Thin-film transistors [TFT]: characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
H10D 62/40
Semiconductor bodies, or regions thereof, of devices having potential barriers: crystalline structures
H10D 84/85
Of only insulated-gate FETs [IGFET]: complementary IGFETs, e.g. CMOS