Semiconductor device

A semiconductor device comprising an organic semiconductor element A and an organic semiconductor element B, wherein

• the organic semiconductor element A has a source electrode and a drain electrode disposed on a surface of a substrate;
• a channel gap disconnecting the source electrode and the drain electrode;
• an organic semiconductor layer disposed on the source electrode, the drain electrode and the channel gap;
• an insulating film disposed on the organic semiconductor layer, a gate electrode disposed on the insulating film;
• a bank defining the organic semiconductor layer, and a hole through the bank,
• a distance between the apex of the bank and the surface of the substrate is greater than a distance between the apex of the channel gap and the surface of the substrate,
• the organic semiconductor element B, has a gate electrode connected with the source electrode or the drain electrode of the organic semiconductor element A via the hole through the bank of the organic semiconductor element A,
• the source electrode or the drain electrode of the organic semiconductor element A and the gate electrode of the organic semiconductor element B are disposed on a plane, and
• the hole extends along the plane.