Nitride semiconductor light emitting device

A nitride semiconductor light emitting device comprising:

• an n-type semiconductor region;
• an active layer formed on the n-type semiconductor region;
• a p-type semiconductor region formed on the active layer;
• an n-electrode disposed in contact with the n-type semiconductor region;
• a p-electrode formed on the p-type semiconductor region;
• and
• at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode,
• wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited,
• the multi-layer structure comprises one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack, and
• at least two of the AlGaN layer, the GaN layer and InGaN layer have a different concentration of dopant or a different doping type from one another.