Nitride/zinc oxide based light-emitting diodes
AssigneeGeorgia Tech Research Corporation
InventorsGon Namkoong, William Alan Doolittle
Life of this patent
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Abstract
A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.
Claims18
A white light-emitting nitride/zinc oxide (ZnO) based compound semiconductor device having a heterostructure comprising:
- an active Al1-x-yInxGayN light-emitting layer;
- 0≦x<1, 0<y≦1, and x+y=0.1 to 1;
- an n-type ZnO substrate;
- and
- a cladding layer of p-type GaN,
- said active light-emitting layer situated or formed directly or indirectly on or in contact with said n-type ZnO substrate, and the cladding layer of p-type GaN situated or formed directly or indirectly on or in contact with the active light-emitting layer,
- said compound semiconductor device doped with an impurity.
A light-emitting heterojunction nitride/zinc oxide-based compound semiconductor device having a heterostructure comprising:
- a light-emitting layer formed of a low-resistivity Al1-x-yInxGayN;
- 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped with a n-type impurity;
- an active light-emitting layer joined to an n-type zinc oxide-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
- and
- a cladding layer joined to said active light-emitting layer and formed of a low-resistivity, p-type GaN-based compound semiconductor.
Dependencies are inferred from the claim text.