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US 7,888,668 B2Granted
Phase change memory
AssigneeUnited Microelectronics Corp.
InventorsChien-Li Kuo, Kuei-Sheng Wu, Yung-Chang Lin
Life of this patent
Estimating the term…
Abstract
A phase change memory and the method for manufacturing the same are disclosed. The phase change memory includes a word line, a phase change element, a plurality of heating parts, and a plurality of bit lines. The phase change material layer is electrically connected to the word line and the heating parts. Each heating part is electrically connected to a respective bit line.
Claims17
A phase change memory unit, comprising:
- a word line;
- a phase change element having a plurality of phase change regions;
- a plurality of bit lines;
- and
- a plurality of heating parts electrically connected to the phase change regions of the phase change element respectively, each of the heating parts being electrically connected to a corresponding bit line.
2 more elements
A method of manufacturing a phase change memory unit, comprising:
- providing a semiconductor substrate having at least a MOS transistor, a first dielectric layer, and a contact plug disposed in the first dielectric layer, wherein the contact plug is used as a lower electrode of the phase change memory unit and is electrically connected to a source/drain of the MOS transistor;
- forming a second dielectric layer covering the first dielectric layer;
- forming a patterned heating layer on the second dielectric layer to define a plurality of heating elements;
- forming a third dielectric layer covering the heating elements;
- forming a phase change element embedded in the second dielectric layer and the third dielectric layer, the phase change element being electrically connected to a patterned glue layer;
- forming a fourth dielectric layer covering the phase change element and the third dielectric layer;
- forming a plurality of side heating contacts embedded in the third dielectric layer and the fourth dielectric layer, the side heating contacts being positioned around the phase change element, and each of the side heating contacts being electrically connected to a corresponding heating part;
- and
- forming a fifth dielectric layer and a plurality of metal traces on the side heating contacts and the fourth dielectric layer, wherein the metal traces act as bit lines of the phase change memory unit and each of the bit lines is electrically connected to the corresponding heating part.
6 more elements
A phase change memory unit, comprising:
- a top word line and a bottom word line;
- a plurality of phase change elements disposed between the top word line and the bottom word line, wherein a portion of the phase change elements is electrically connected to the top word line and the rest of the phase change elements are electrically connected to the bottom word line;
- a plurality of bit lines between the phase change elements, the top word line, and the bottom word line;
- a plurality of heating parts electrically connected to the adjacent phase change elements to a corresponding bit line, and
- a plurality of through plugs electrically connected to the phase change elements to the corresponding top word line or bottom word line.
2 more elements
Dependencies are inferred from the claim text.