US 7,888,667 B2Granted

Phase change memory device

AssigneeSamsung Electronics Co., Ltd.

InventorsYoon-Jong Song, Se-Ho Lee, Ki-Nam Kim, Su-Youn Lee, Jae-Hyun Park

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Abstract

A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.

Claims5

Dependent claims

A phase change memory device, comprising:

a mold layer disposed on a substrate;
a substantially cylindrical heating electrode disposed in an opening in the mold layer, and the heating electrode having a bottom portion disposed on the substrate and a sidewall conformally disposed on an inner wall of the opening;
a filling insulation pattern in the opening, the filling insulation pattern surrounded by the sidewall of the heating electrode;
a cylindrical gap region in the mold layer, the cylindrical gap region defined by an upper portion of the inner wall of the opening, a top surface of the sidewall of the heating electrode and an outer wall of the filling insulation pattern;
and
a phase change material pattern disposed on the mold layer and the filling insulation pattern, and disposed in the cylindrical gap region, the phase change material pattern contacting the top surface of the sidewall of the heating electrode,
wherein the top surface of the sidewall of the heating electrode is lower than a top surface of the mold layer, and a contacting interface between the heating electrode and the phase change material pattern is located inside the opening.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/008,125Filed 9 Jan 2008 · continuation
Priority: KR 2004-5600019 Jul 2004
Published: US 2008/0173862 A124 Jul 2008
Granted: 15 Feb 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10N 70/231
Multistable switching devices, e.g. memristors: based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
H10N 70/066
Shaping switching materials: by filling of openings, e.g. damascene method
H10N 70/826
Device geometry: adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H10N 70/8413
Electrodes: adapted for resistive heating

Family

Application11/149,755Parent of this continuation · filed 10 Jun 2005
US 2008/0173862 A1Pre-grant publication · published 24 Jul 2008
US 7,339,185 B2Parent of this continuation
US 2006/0011902 A1Published application
US 7,888,667 B2This patent

From the US filing history. Foreign family members aren’t listed.