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US 7,888,665 B2Granted
Integrated circuit including memory cell having cup-shaped electrode interface
AssigneeQimonda AG
InventorsThomas Happ, Jan Boris Philipp
Life of this patent
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Abstract
An integrated circuit includes a first electrode and a cup-shaped electrode interface coupled to the first electrode. The integrated circuit includes a dielectric spacer at least partially laterally enclosed by the electrode interface and a resistance changing material laterally enclosed by the spacer and contacting the electrode interface. The integrated circuit includes a second electrode coupled to the resistance changing material.
Claims24
An integrated circuit comprising:
- a first electrode;
- a cup-shaped electrode interface coupled to the first electrode, the electrode interface comprising a bottom portion and a sidewall portion;
- a dielectric spacer at least partially laterally enclosed by the electrode interface;
- a resistance changing material laterally enclosed by the spacer and directly contacting the bottom portion of the electrode interface;
- and
- a second electrode coupled to the resistance changing material and directly contacting the electrode interface.
3 more elements
An integrated circuit comprising:
- a first electrode:
- a cup-shaped electrode interface coupled to the first electrode;
- a dielectric spacer at least partially laterally enclosed by the electrode interface;
- a resistance changing material laterally enclosed by the spacer and contacting the electrode interface;
- a second electrode coupled to the resistance changing material;
- and
- a dielectric material contacting a top of the electrode interface, a bottom of the second electrode, and a sidewall of the spacer.
4 more elements
A system comprising:
- a host;
- and
- a memory device communicatively coupled to the host, the memory device comprising:
- a first electrode;
- a cup-shaped electrode interface coupled to the first electrode;
- a first dielectric material at least partially laterally enclosed by the electrode interface;
- a phase change element laterally enclosed by the first dielectric material and contacting the electrode interface;
- and
- a second electrode coupled to the phase change element,
- wherein the electrode interface comprises a heater material.
7 more elements
A method for fabricating an integrated circuit, the method comprising:
- providing a preprocessed wafer including a contact laterally surrounded by first dielectric material;
- etching a portion of the contact to provide an opening and a first electrode;
- depositing an electrode interface material on the first electrode and a sidewall of the first dielectric material in the opening;
- fabricating a dielectric spacer on a sidewall of the electrode interface material in the opening such that the dielectrics, spacer does not directly contact the first dielectric material;
- depositing resistance changing material in the opening on the spacer and over the electrode interface material;
- and
- fabricating a second electrode coupled to the resistance changing material.
4 more elements
A method for fabricating a memory cell, the method comprising:
- providing a preprocessed wafer including a contact laterally surrounded by first dielectric material;
- etching a portion of the contact to provide a first electrode and an opening exposing a sidewall of the first dielectric material;
- depositing an electrode interface material layer over exposed portions of the first dielectric material and the first electrode;
- depositing a second dielectric material layer over the electrode interface material layer;
- spacer etching the second dielectric material layer to provide a spacer on a sidewall of the electrode interface material layer in the opening;
- depositing a sacrificial material over exposed portions of the electrode interface material layer and the spacer;
- planarizing the sacrificial material and the electrode interface material layer to expose the first dielectric material and to provide a cup-shaped electrode interface;
- removing the sacrificial material;
- depositing phase change material over exposed portions of the first dielectric material, the electrode interface, and the spacer;
- planarizing the phase change material to expose the first dielectric material;
- and
- fabricating a second electrode contacting the phase change material.
9 more elements
Dependencies are inferred from the claim text.