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US 7,888,661 B2Granted
Methods for in situ surface treatment in an ion implantation system
AssigneeAxcelis Technologies, Inc.
InventorIvan L. Berry, III
Life of this patent
Estimating the term…
Abstract
A system and methods are provided for mitigating or removing workpiece surface contaminants or conditions. Methods of the invention provide treatment of the wafer surface to provide a known surface condition. The surface condition can then be maintained during and following implantation of the workpiece surface with a dopant.
Claims14
A method of treating a workpiece comprising:
- establishing a workpiece within an ion implantation system, the ion implantation system comprising a loadlock chamber operably coupled to a plasma source or;
- exposing a surface of the workpiece to a plasma generated by the plasma source within the ion implantation system to adjust and maintain the workpiece surface to a known surface condition.
An ion implantation system for treating a workpiece comprising:
- an ion source operable to produce an ion beam;
- a plasma surface treatment tool configured to adjust and maintain a workpiece surface to a known surface condition, the plasma surface treatment tool comprising a loadlock chamber operably coupled to a plasma source or;
- and
- a process chamber configured to house the workpiece while the surface treatment tool adjusts and maintains the workpiece surface to the known condition.
1 more element
Dependencies are inferred from the claim text.