Ion implantation apparatus
AssigneeNissin Ion Equipment Co., Ltd.
InventorHideki Fujita
Life of this patent
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Abstract
An ion implantation apparatus is provided with first and second magnets arranged so as to face each other in a Y direction across a path for a ribbon-shaped ion beam. The first and second magnets cross a traveling direction of the ribbon-shaped ion beam. Each of the first and second magnets has a pair of magnetic poles on an inlet side and on an outlet side of the ion beam. The polarities thereof are opposite between the first magnet and the second magnet.
Claims10
An ion implantation apparatus, in which an ion beam formed in a ribbon-shape having a larger dimension in an X direction than a dimension in a Y direction substantially orthogonal to the X direction is irradiated onto a target, the ion implantation apparatus comprising:
- first and second magnets provided on an upstream side of the target, facing each other in the Y direction across a center of a cross-section of a path for the ribbon-shaped ion beam, and crossing a traveling direction of the ribbon-shaped ion beam,
- wherein the first magnet has a first magnetic pole having a first polarity on an inlet side of the ion beam and a second magnetic pole having a second polarity opposite to the first polarity on an outlet side of the ion beam, the second magnet has a third magnetic pole having the second polarity on the inlet side of the ion beam and a fourth magnetic pole having the first polarity on the outlet side of the ion beam, and
- the first and second magnets generate magnetic fields in a direction so that an inward Lorentz force is applied to the ion beam between both the magnets, and the ion beam is narrowed in the Y direction.
Dependencies are inferred from the claim text.