Cleaning liquid for semiconductor device and cleaning method
AssigneeFUJIFILM Corporation
InventorsHiroyuki Seki, Katsuyuki Nukui, Tadashi Inaba, Hideo Fushimi
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Abstract
The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14.
Claims15
A cleaning liquid for semiconductor devices comprising:
- a reducing agent;
- and
- a surfactant,
- wherein the cleaning liquid has a pH of 12.5 to 14, and
- wherein the surfactant is a cationic surfactant selected from the group consisting of a quaternary ammonium salt surfactant and an alkylpyridium surfactant.
A semiconductor device-cleaning method comprising:
- cleaning a semiconductor device using the cleaning liquid for semiconductor devices comprising:
- a reducing agent;
- and
- a surfactant, wherein the cleaning liquid has a pH of 12.5 to 14, and wherein the surfactant is a cationic surfactant selected from the group consisting of a quaternary ammonium salt surfactant and an alkylpyridium surfactant.
A semiconductor device-cleaning method comprising:
- a cleaning step for cleaning a semiconductor device using a cleaning liquid for semiconductor devices comprising:
- a reducing agent;
- and
- a surfactant, wherein the cleaning liquid has a pH of 12.5 to 14, and wherein the surfactant is a cationic surfactant selected from the group consisting of a quaternary ammonium salt surfactant and an alkylpyridium surfactant after a dry etching step.
Dependencies are inferred from the claim text.