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US 7,888,272 B2Granted
Methods for manufacturing memory and logic devices using the same process without the need for additional masks
AssigneeMacronix International Co., Ltd.
InventorsKuan Fu Chen, Yin Jen Chen, Tzung Ting Han, Ming-Shang Chen, Shih Chin Lee
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Abstract
A semiconductor fabrication process allows the fabrication of both logic and memory devices using a conventional CMOS process with a few additional steps. The additional steps, however, do not require additional masks. Accordingly, the process can be reduce the complexity, time, and cost for fabricating logic and memory devices on the same substrate, especially for embedded applications.
Claims14
A method for fabricating both logic and non-volatile memory devices, comprising:
- forming an oxide layer on a substrate;
- forming a nitride layer on the substrate;
- applying a high thermal treatment sufficient to cause at least some nitrogen atoms to migrate from the nitride layer to the substrate;
- removing the nitride and oxide layers;
- and
- growing a gate oxide layer over the substrate, wherein growing the gate oxide layer causes the nitrogen atoms trapped in the substrate to migrate into the gate oxide layer.
3 more elements
Dependencies are inferred from the claim text.