Semiconductor device and manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYumi Hayashi, Tadayoshi Watanabe
Life of this patent
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Abstract
In one aspect of the present invention, A method for manufacturing a semiconductor device may include forming a first wiring in a first insulating layer on a base member, forming a second insulating layer on the first insulating layer, forming a first hole in the second insulating layer so as to reach the first wiring in the first insulating layer and a second hole in the second insulating layer so as to reach the first insulating layer, forming a via contact in the first hole, and forming a third insulating layer on the second insulating layer so as to shut the second hole.
Claims11
A method for manufacturing a semiconductor device, comprising:
- forming a first wiring in a first insulating layer on a base member;
- forming a second insulating layer on the first insulating layer;
- forming a first hole in the second insulating layer so as to reach the first wiring in the first insulating layer and a second hole in the second insulating layer so as to reach the first insulating layer;
- forming a via contact in the first hole;
- and
- forming a third insulating layer above the second insulating layer so as to shut the second hole with an air gap in the second hole, said air gap provided in the same level of the via contact and not provided in the same level of the first wiring layer.
Dependencies are inferred from the claim text.