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US 7,888,261 B2Granted
Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
AssigneeMosaid Technologies Incorporated
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.
Claims38
A method of forming a contact in an opening in an insulative material, comprising:
- forming a non-metal barrier material over the insulative material within the opening;
- depositing a conductive material over the non-metal barrier material by ionized sputtering or metal evaporation to fill the opening;
- and
- reflowing the conductive material in an atmosphere of atomic hydrogen at a temperature of less than about 400° C.
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A method of forming an interconnect, comprising:
- forming a non-metal barrier material over an insulative layer comprising a trench by exposing a surface of the insulative layer to ammonia (NH3) plasma or to a plasma containing a mixture of ammonia and molecular nitrogen;
- depositing a conductive material over the non-metal barrier material;
- and
- reflowing the conductive material in an atmosphere of atomic hydrogen at a temperature of less than about 400° C.
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Dependencies are inferred from the claim text.