Method of making electronic device
AssigneeSeiko Epson Corporation
InventorNobuaki Hashimoto
Life of this patent
Estimating the term…
Abstract
A semiconductor device with its package size close to its chip size has a stress absorbing layer, allows a patterned flexible substrate to be omitted, and allows a plurality of components to be fabricated simultaneously. There is: a step of forming electrodes (12) on a wafer (10); a step of providing a resin later (14) as a stress relieving layer on the wafer (10), avoiding the electrodes (12); a step of forming a chromium layer (16) as wiring from electrodes (12) over the resin layer (14); and step of forming solder balls as external electrodes on the chromium layer (16) over the resin layer (14); and a step of cutting the wafer (10) into individual semiconductor chips; in the steps of forming the chromium layer (16) and solder balls, metal thin film fabrication technology is used during the wafer process.
Claims8
A method of making a semiconductor device, the method comprising:
- providing a stress relieving layer on a first surface of a wafer on which a first electrode is formed such that the stress relieving layer avoids at least a part of the first electrode;
- forming a radiator on a second surface of the wafer opposite to the first surface of the wafer;
- forming a wiring having a first portion, a second portion and a third portion, the first portion of the wiring being positioned on the first electrode, the second portion of the wiring being positioned on the stress relieving layer, the third portion of the wiring connecting the first portion of the wiring and the second portion of the wiring;
- forming a second electrode on at least a part of the second portion of the wiring;
- and
- cutting the wafer into individual pieces.
A method of making a semiconductor device, the method comprising:
- providing a resin layer on a first surface of a wafer on which a first electrode is formed such that the resin layer avoids at least a part of the first electrode;
- forming a radiator on a second surface of the wafer opposite to the first surface of the wafer;
- forming a wiring having a first portion, a second portion and a third portion, the first portion of the wiring being positioned on the first electrode, the second portion of the wiring being positioned on the resin layer, the third portion of the wiring connecting the first portion of the wiring and the second portion of the wiring;
- forming a second electrode on at least a part of the second portion of the wiring;
- and
- cutting the wafer into individual pieces.
Dependencies are inferred from the claim text.