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US 7,888,258 B2Granted
Forming method of electrode and manufacturing method of semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsYoshito Akutagawa, Hiroyuki Matsui, Yutaka Makino
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Abstract
A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.
Claims8
A manufacturing method of a semiconductor device, comprising the steps of:
- providing an electrode material on a conductive part provided on a semiconductor substrate;
- exposing the electrode material in a first reducing atmosphere before the electrode material is exposed in an oxidizing atmosphere;
- discharging the first reducing atmosphere before the electrode material is exposed in the oxidizing atmosphere;
- exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in the oxidizing atmosphere;
- and
- exposing the melted electrode material, in a second reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.
3 more elements
Dependencies are inferred from the claim text.