Semiconductor device having a refractory metal containing film and method for manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsToshiyuki Takewaki, Mari Watanabe
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Abstract
A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO2 film provided on the silicon substrate, copper films embedded in the SiO2 film, TiN films covering an upper face of a boundary region between an upper face of copper films and the copper films, and the SiO2 film, and SiON films covering an upper face of the TiN films.
Claims7
A method for manufacturing a semiconductor device comprising:
- forming a first insulating film on a semiconductor substrate;
- embedding a copper containing metal film in said first insulating film;
- forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;
- forming a second insulating film covering an upper face of said refractory metal containing film;
- forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film and said refractory metal containing film while employing said resist film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film;
- and
- removing said resist film while employing an oxygen plasma.
A method for manufacturing a semiconductor device comprising:
- forming a first insulating film on a semiconductor substrate;
- embedding a copper containing metal film in said first insulating film;
- forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;
- forming a second insulating film covering an upper face of said refractory metal containing film;
- and
- forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film while employing said resist film as a mask, removing said resist film while employing an oxygen plasma, etching selectively said refractory metal containing film while employing said second insulating film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film in connection with said second insulating film and said refractory metal containing film.
A method for manufacturing a semiconductor device comprising:
- forming a first insulating film on a semiconductor substrate;
- embedding a copper containing metal film in said first insulating film;
- forming a refractory metal containing film covering an upper face of said first insulating film and an upper face of said copper containing metal film;
- forming a second insulating film covering an upper face of said refractory metal containing film;
- forming a resist film on an upper face of said second insulating film, etching selectively said second insulating film and said refractory metal containing film while employing said resist film as a mask, and carrying out a patterning into a shape to cover an upper portion of said copper containing metal film and an upper portion of a boundary portion between said copper containing metal film and said first insulating film;
- removing said resist film while employing an oxygen plasma;
- removing said second insulating film;
- and
- forming an electrode pad on an upper face of said refractory metal containing film.
Dependencies are inferred from the claim text.