Method of producing large area SiC substrates

A method for producing an SiC-containing film deposited on an Si substrate, said method comprising:

• etching a Si substrate to remove any native oxide;
• carbonizing said Si substrate after said etching;
• epitaxially growing a first film on said Si substrate at temperatures below 1000° C., wherein said first film is a SiC(x)AlN(1-x) film, where 0<x<1;
• and
• epitaxially growing a second film on said SiC(x)AlN(1-x) film, wherein said second film is a GaN film.