Selective deposition of germanium spacers on nitride
AssigneeInternational Business Machines Corporation
InventorsAshima B. Chakravarti, Anthony I. Chou, Toshiharu Furukawa, Steven J. Holmes, Wesley C. Nazle
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Abstract
A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
Claims14
A method of selectively forming a semiconductor structure comprising:
- providing a first insulator surface adjacent an second insulator surface;
- removing native oxide from said first insulator surface;
- heating said first insulator surface and said second insulator surface;
- exposing said first insulator surface and said second insulator surface to a semiconductor containing gas;
- and
- forming a semiconductor structure on said first insulator and preventing the forming of any semiconductor structure on said second insulator during said exposing to said semiconductor containing gas.
A method of selectively forming a germanium structure comprising:
- providing a nitride surface adjacent an oxide surface;
- removing native oxide from said nitride surface in a chemical oxide removal process that is free of water;
- heating said nitride surface and said oxide surface;
- exposing said oxide surface and said nitride surface to a germanium containing gas;
- forming a germanium structure on said nitride surface and preventing the forming of any germanium structure on said oxide surface during said exposing to said germanium containing gas.
A method of selectively forming a semiconductor structure comprising:
- providing a first insulator surface adjacent an second insulator surface;
- removing native oxide from said first insulator surface;
- heating said first insulator surface and said second insulator surface;
- and
- exposing said first insulator surface and said second insulator surface to a semiconductor containing gas, and
- wherein during said exposing process, a semiconductor forms only on said first insulator surface and does not form on said second insulator surface.
Dependencies are inferred from the claim text.