Fabrication of substrates with a useful layer of monocrystalline semiconductor material
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsFabrice Letertre, Bruno Ghyselen, Olivier Rayssac
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Abstract
A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
Claims22
A method for fabricating a semiconductor substrate which comprises:
- providing a source substrate including a seed layer and a weakened zone, wherein the source substrate and the seed layer are made of a first material having a first thermal expansion coefficient and;
- detaching in a first detachment step the seed layer from the source substrate at the weakened zone;
- transferring the seed layer on to a support substrate at an adhesion interface, wherein the support substrate is made of a second material having a second thermal expansion coefficient;
- depositing a working layer on the seed layer to form a composite substrate, wherein the working layer is made of a third material that has a third thermal expansion coefficient;
- and
- detaching in a second detachment step the seed layer and the working layer from the composite substrate at the adhesion interface,
- wherein the material and thickness of the seed layer are selected so that thermal expansion of the support substrate and of the working layer deforms the seed layer;
- and
- wherein the thermal expansion coefficients of the first, second and third materials are different.
A method for fabricating a semiconductor substrate which comprises:
- transferring a seed layer on to a support substrate after a first detachment step of the seed layer from a source substrate at an adhesion interface;
- depositing a working layer on the seed layer to form a composite substrate,
- wherein the material and thickness of the seed layer are selected so that thermal expansion of the support substrate and of the working layer deforms the seed layer;
- and
- detaching in a second detachment step the seed layer and the working layer from the composite substrate at the adhesion interface to form the semiconductor substrate.
Dependencies are inferred from the claim text.