Method for fabricating a three-dimensional capacitor

A method of fabricating a capacitor, the method comprising:

• forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed, and wherein the at least one of the two or more dielectric layers formed before the lower electrode is formed comprises a buffer layer comprising a Group V metal oxide, wherein the buffer layer is tapered such that a thickness of the buffer layer varies gradually between a first edge of the lower electrode and a second edge of the lower electrode;
• and
• forming an upper electrode of a platinum group metal on the two or more dielectric layers.