Method of making an integrated circuit including structuring a material
AssigneeQimonda AG
InventorJohannes von Kluge
Life of this patent
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Abstract
A method of making an integrated circuit including structuring a material. The method includes providing an arrangement of three-dimensional bodies. The material is arranged between the bodies and structured directed radiation. The projection pattern of the three-dimensional bodies is transferred into the material. The structured material connects at least two of the three-dimensional bodies.
Claims20
A method of making an integrated circuit including structuring a material, the method comprising:
- providing an arrangement of three-dimensional bodies with the material arranged between the bodies;
- and
- structuring the material by directed radiation,
- whereby the projection pattern of the three-dimensional bodies is transferred into the material and the structured material connects at least two of the three-dimensional bodies.
A method of making an integrated circuit including structuring a material, the method comprising:
- providing an arrangement of three-dimensional bodies with the material arranged between the bodies;
- and
- structuring the material by directed radiation,
- whereby the projection pattern of the three-dimensional bodies is transferred into the material and the structured material connects at least two of the three-dimensional bodies, and
- wherein the arrangement of three-dimensional bodies forms part of stack capacitors and the material forms part of a support structure arranged between the stack capacitors.
A method of making an integrated circuit including structuring a material, the method comprising:
- providing an arrangement of three-dimensional bodies with the material arranged between the bodies;
- and
- structuring the material by directed radiation,
- whereby the projection pattern of the three-dimensional bodies is transferred into the material and the structured material connects at least two of the three-dimensional bodies, and
- wherein the arrangement of three-dimensional bodies forms stack capacitors and the material is used to structure a second material forming a support structure arranged between the stack capacitors.
Dependencies are inferred from the claim text.