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US 7,888,227 B2Granted
Integrated circuit inductor with integrated vias
AssigneeTexas Instruments Incorporated
InventorsRobert L. Pitts, Greg C. Baldwin
Life of this patent
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Abstract
Integrated circuit inductors (5) are formed by interconnecting various metal layers (10) in an integrated circuit with continuous vias (200). Using continuous vias (200) improves the Q factor over existing methods for high frequency applications. The contiguous length of the continuous vias should be greater than three percent of the length of the inductor (5).
Claims5
A method of forming an integrated circuit inductor, comprising:
- providing a semiconductor;
- forming a first metal layer of a first length above said semiconductor;
- forming a second metal layer of a second length above said first metal layer;
- forming a continuous via of a third length interconnecting said first metal layer and said second metal layer to form an integrated circuit inductor wherein said third length is greater than three percent but less than all of said first length;
- said first and second metal layers being defined by respective substantially planar surfaces configured in superposed spiral loops having first and second adjacent lead ends, and each spiral loop including a plurality of concentric symmetric turns connected by metal cross-over portions located at central portions of the spiral loops opposite the lead ends.
2 more elements
Dependencies are inferred from the claim text.