Back to results
US 7,888,220 B2Granted
Self-aligned insulating etchstop layer on a metal contact
AssigneeIntel Corporation
InventorsWilly Rachmady, James Blackwell
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation and growth of the non-conductive metal oxide layer.
Claims9
A method for forming a self-aligned insulating layer on a metal gate structure, the method comprising
- providing a substrate having a transistor that includes a sacrificial gate structure;
- forming a first oxide layer over the substrate;
- removing the sacrificial gate structure into the first via;
- depositing a metal gate structure into the first via;
- selectively functionalizing the first oxide layer, but not the metal gate structure, with a silane selected from the group consisting of alkylsilane and perfluoroalkylsilane to inhibit nucleation of a non-conductive metal oxide layer;
- and
- growing a non-conductive metal oxide layer on the metal gate structure and not the functionalized first oxide layer.
4 more elements
Dependencies are inferred from the claim text.