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US 7,888,204 B2Granted
Method of forming nonvolatile memory device having floating gate and related device
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Geun Jee, Ho-Min Son, Yong-Woo Hyung, Jae-Jong Han, Taek-Jin Lim
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Abstract
A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.
Claims16
A method of forming a non-volatile memory device comprising:
- forming isolation patterns to define an active region on a substrate;
- forming a floating gate pattern self-aligned on the active region;
- and
- forming a gate line on the floating gate pattern, wherein the floating gate pattern contains impurity ions having a concentration that decreases as the floating gate pattern gets nearer to the active region, wherein the isolation patterns are formed to protrude upwardly from the active region, and
- wherein the forming of the floating gate pattern comprises:
- forming a first floating gate layer covering the isolation patterns and the active region;
- forming a screen layer on the first floating gate layer;
- forming a second floating gate layer on the screen layer;
- and
- planarizing the second floating gate layer, the screen layer, and the first floating gate layer until the isolation patterns are exposed.
7 more elements
Dependencies are inferred from the claim text.