Electronic element
AssigneeCanon Kabushiki Kaisha
InventorsHirokatsu Miyata, Yohei Ishida, Yasuhiro Kawashima
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Abstract
The object is to fabricate a novel organic semiconductor element which can effectively utilize the main-chain conduction of a conjugated high molecular compound having semiconductor-like properties. Provided is an electronic element which contains, as components, a pair of electrodes which is formed on a substrate, a mesoporous film in which tubular mesopores, which are orientation controlled in one direction, are formed, the mesoporous film being formed between the electrodes so as to be in contact with the electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and is in contact with the mesoporous film.
Claims10
A method of manufacturing an electronic element comprising a pair of electrodes formed on a substrate, a mesoporous film having tubular mesopores oriented in one direction, the mesoporous film being formed between the pair of electrodes so as to be in contact with the pair of electrodes, a conjugated high molecular compound held in the tubular mesopores, and a third electrode which is electrically insulated from the conjugated high molecular compound and formed so as to be in contact with the mesoporous film, the method comprising a step of forming the conjugated high molecular compound in the tubular mesopores, which step comprises:
- (i) a step of forming the mesoporous film which is made up so as to contain tubular molecular assemblies of a surfactant having a uniform diameter, which are oriented in one direction;
- a step of removing the surfactant from the tubular mesopores of the mesoporous film;
- a step of performing treatment so that surfaces of the tubular mesopores after removal of the surfactant obtain hydrophobicity;
- and
- a step of introducing the conjugated high molecular compound subsequently to the hydrophobicizing treatment;
- and
- (ii) a step of forming the pair of electrodes and the third electrode.
A method of manufacturing a field-effect transistor, comprising steps of:
- forming a mesoporous silica film having tubular mesopores on a substrate, the mesopores having a substantially uniform diameter and being oriented in one direction;
- forming a conjugated high molecular compound in the tubular mesopores;
- patterning by wet etching the mesoporous silica film having the tubular mesopores holding the conjugated high molecular compound formed therein;
- forming a source electrode and a drain electrode so that an electric field is applied to the patterned mesoporous silica film in the direction parallel to the oriented tubular mesopores;
- and
- forming a gate electrode so as to be electrically insulated from the conjugated high molecular compound and in contact with the mesoporous silica film.
A method of manufacturing a field-effect transistor, comprising steps of:
- preparing a substrate which has an electrically conductive part in at least a portion of a surface thereof;
- forming a mesoporous silica film on the electrically conductive part of the substrate, the mesopores having a substantially uniform diameter and being oriented in one direction;
- forming a conjugated high molecular compound in the tubular mesopores of the mesoporous silica film formed on the substrate;
- patterning by wet etching the mesoporous silica film having the tubular mesopores holding the conjugated high molecular compound formed therein;
- and
- forming a source electrode and a drain electrode so that an electric field is applied to the patterned mesoporous silica film in the direction parallel to the oriented tubular mesopores.
Dependencies are inferred from the claim text.