Solar cell contact formation process using a patterned etchant material
AssigneeApplied Materials, Inc.
InventorsTimothy W. Weidman, Rohit Mishra
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Abstract
Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed.
Claims23
A method of forming a solar cell device, comprising:
- forming a dielectric layer on a surface of a substrate;
- disposing an etchant material on a plurality of regions of the dielectric layer, wherein the etchant material further comprises ammonium fluoride and a doping material that contains an element selected from the group consisting of phosphorous, boron, arsenic, antimony, aluminum, indium and gallium;
- heating the substrate to a desired temperature to causes the etchant material to remove at least a portion of the dielectric layer in the plurality of regions to expose a plurality of regions of the surface of the substrate;
- and
- depositing a conducting layer on the plurality of exposed regions of the surface.
A method of forming a solar cell device, comprising:
- forming a dielectric layer on a surface of a substrate;
- disposing an etchant material on a plurality of regions of the dielectric layer, wherein the etchant material comprises ammonium fluoride and a surfactant selected from a group consisting of polyethylene glycol, polypropylene glycol, polyethylene glycol-polypropylene glycol-block-copolymer, and glycerin;
- heating the substrate to a desired temperature to causes the etchant material to remove at least a portion of the dielectric layer in the plurality of regions to expose a plurality of regions of the surface of the substrate;
- and
- depositing a conducting layer on the plurality of exposed regions of the surface.
A method of forming a solar cell device, comprising:
- forming a dielectric layer on a surface of a substrate;
- disposing an etchant material on a plurality of regions of the dielectric layer, wherein the etchant material comprises a doping material;
- heating the substrate to a desired temperature to causes the etchant material to remove at least a portion of the dielectric layer in the plurality of regions to expose a plurality of regions of the surface of the substrate, wherein the heating the substrate comprises heating the substrate to a temperature greater than about 800° C.;
- and
- depositing a conducting layer on the plurality of exposed regions of the surface.
A method of forming a solar cell device, comprising:
- forming a dielectric layer on a surface of a substrate, wherein the dielectric layer comprises an amorphous silicon layer, and a silicon oxide layer or a silicon nitride layer;
- disposing an etchant material on a plurality of regions of the dielectric layer;
- heating the substrate to a desired temperature to causes the etchant material to remove at least a portion of the dielectric layer in the plurality of regions to expose a plurality of regions of the surface of the substrate;
- and
- depositing a conducting layer on the plurality of exposed regions of the surface.
A method of forming a solar cell device, comprising:
- forming a dielectric layer on a surface of a substrate, wherein the dielectric layer comprises one or more doping elements;
- disposing an etchant material on a plurality of regions of the dielectric layer, wherein the etchant material comprises ammonium fluoride;
- heating the substrate to a desired temperature to causes the etchant material to remove at least a portion of the dielectric layer to form a plurality of exposed regions of the surface of the substrate;
- and
- depositing a conducting layer on the plurality of exposed regions.
Dependencies are inferred from the claim text.