Photoelectric conversion device and method for manufacturing the same

A method for manufacturing a photoelectric conversion device comprising:

• forming a first electrode over a substrate,
• forming a first semiconductor layer of a microcrystalline semiconductor including an impurity element imparting one conductivity type, over the first electrode,
• forming a second semiconductor layer including a crystal with a three-dimensional shape tapered in a direction of deposition of a film, over the first semiconductor layer, by introducing a semiconductor source gas and a dilution gas which are mixed in a mixing ratio at which an amorphous semiconductor can be formed and producing plasma to deposit the film, wherein a flow rate of the dilution gas is set to 1 time to 6 times a flow rate of the semiconductor source gas at an initial stage of the deposition,
• forming a third semiconductor layer including an impurity element imparting a conductivity type opposite to the first semiconductor layer, over the second semiconductor layer, and
• forming a second electrode over the third semiconductor layer.

A method for manufacturing a photoelectric conversion device comprising:

• forming a first electrode over a substrate,
• forming a first semiconductor layer of a microcrystalline semiconductor including an impurity element imparting one conductivity type, over the first electrode,
• mixing a semiconductor source gas and a dilution gas in a mixing ratio at which an amorphous semiconductor can be formed,
• producing plasma to deposit a second semiconductor layer including a crystal with a three-dimensional shape tapered in a direction of deposition of a film, over the first semiconductor layer at a flow rate where the dilution gas is set to 1 time to 6 times a flow rate of the semiconductor source gas at an initial stage of the deposition,
• forming a third semiconductor layer including an impurity element imparting a conductivity type opposite to the first semiconductor layer, over the second semiconductor layer, and
• forming a second electrode over the third semiconductor layer.