US 7,888,164 B2 · Programmable via structure and method of fabricating same

Abstract

A method of fabricating a programmable via structure is provided. The method includes providing a patterned heating material on a surface of an oxide layer. The oxide layer is located above a semiconductor substrate. A patterned dielectric material is formed having a least one via on a surface of the patterned heating material. The at least one via is filled with a phase change material such that a lower surface of the phase change material is in direct contact with a portion of the patterned heating material. A patterned diffusion barrier is formed on an exposed surface of the at least one via filled with the phase change material. A method of programmable a programmable via structure made by the method is also disclosed.

Claims17

Dependent claims

A method of fabricating a semiconductor structure comprising:

providing a patterned heating material having a resistivity from 100 to 10,000 ohm cm on a surface of an oxide layer, said oxide layer is located above a semiconductor substrate;
forming a patterned dielectric material having a least one via on a surface of said patterned heating material;
filling said at least one via with a phase change material such that a lower surface of said phase change material is in direct contact with a portion of said patterned heating material, wherein said phase change material is a chalcogenide material or a chaolcogenide alloy that includes at least one element from Group VIB of the Periodic Table of Elements;
and
forming a patterned diffusion barrier on an exposed surface of said at least one via filled with said phase change material.

2 more elements

Dependencies are inferred from the claim text.

Programmable via structure and method of fabricating same

Life of this patent

Programmable via structure and method of fabricating same

Life of this patent

Abstract

Claims17