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US 7,888,162 B2Granted
Method of manufacturing a photoelectronic device
AssigneeEpistar Corporation
InventorsYu-Ling Chin, Li-Pin Jou, Yu-Chih Yang, Yu-Cheng Yang, Wei-Shou Chen, Cheng-Ta Kuo
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Abstract
This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.
Claims11
A method for manufacturing a photoelectronic device, comprising:
- providing a semiconductor stack layer;
- etching a portion of the surface of the semiconductor stack layer, wherein the surface of the semiconductor stack layer includes an etched portion and an unetched portion;
- forming a first metal adhesive by a printing technology on the unetched portion of the surface of the semiconductor stack layer;
- providing a first energy on the first metal adhesive to form a first electrode, wherein an ohmic contact is formed between the first electrode and the unetched portion of the surface of the semiconductor stack layer;
- forming a second metal adhesive by a printing technology on the etched surface of the semiconductor stack layer;
- and
- providing a second energy on the second metal adhesive to form a second electrode, wherein an ohmic contact is formed between the second electrode and the etched surface of the semiconductor stack layer.
4 more elements
Dependencies are inferred from the claim text.