Solid-state imaging device and method for producing the same

A method for producing a solid-state imaging device, which comprises:

• a photoelectric conversion section;
• a charge transfer section having a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section;
• and
• an antireflection film covering a light-receiving region in the photoelectric conversion section,
• wherein
• forming the antireflection film comprises:
• forming a sidewall on a lateral wall of the charge transfer electrode after forming the charge transfer electrode;
• forming an antireflection film on a substrate surface where the sidewall is formed;
• forming a resist on the antireflection film;
• melting and flattening the resist to expose the antireflection film on the charge transfer electrode;
• removing the antireflection film by using the resist as the mask;
• removing the sidewall;
• covering the charge transfer electrode with an insulating film;
• and
• forming a light-shielding film that reaches a level lower than the top surface of the antireflection film, and that surrounds the periphery of the antireflection film.