Method of manufacturing vertical light emitting device

A method of manufacturing a vertical light emitting device, the method comprising:

• forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate;
• forming a first trench dividing the emissive layer into a plurality of light emitting device units, the emissive layer remaining on a lower part of the first trench;
• forming a passivation layer on the emissive layer so as to fill an inside of the first trench;
• forming a p-type electrode on the p-type semiconductor layer of the emissive layer;
• forming a metal supporting layer on the passivation layer and the p-type electrode;
• removing the substrate so as to expose a surface of the emissive layer;
• removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate;
• forming a n-type electrode on the n-type semiconductor layer of the emissive layer;
• and
• cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
• wherein the removing of the remaining portion of the emissive layer includes exposing the passivation layer and the forming of the passivation layer further includes forming a second trench in the exposed passivation layer;
• and
• wherein the passivation layer is formed to a thickness less than a thickness of the remaining portion of the emissive layer, the metal supporting layer is formed so as to fill the inside of the first trench, the passivation layer contacting the remaining portion of the emissive layer is removed along with the remaining portion of the emissive layer, and the metal supporting layer is exposed when the passivation layer contacting the remaining portion of the emissive layer is removed.