Method of forming laterally distributed LEDs

A method of forming laterally distributed LEDs, comprising:

• providing a semiconductor substrate;
• forming a first buffer layer with a first type of conductivity on the semiconductor substrate;
• forming a first dielectric layer on the first buffer layer;
• patterning to remove a portion of the first dielectric layer, thereby forming a first patterned space within the first dielectric layer;
• forming first multiple quantum wells (MQWs) in the first patterned space;
• forming a second dielectric layer on the first dielectric layer;
• patterning to remove a portion of the second and the first dielectric layers, thereby forming a second patterned space within the first dielectric layer;
• forming second MQWs in the second patterned space, the second MQWs being capable of emitting color different from the first MQWs;
• forming a third dielectric layer on the second or the first dielectric layer;
• patterning to remove a portion of the third, the second and the first dielectric layers, thereby forming a third patterned space within the first dielectric layer;
• forming third MQWs in the third patterned space, the third MQWs being capable of emitting color different from the first and the second MQWs;
• forming second buffer layers with a second type of conductivity on the first, the second and the third active layers;
• and
• forming electrodes on the second buffer layers and on the first buffer layer.