Signal line for a display device, etchant, thin film transistor panel, and method for manufacturing the same

A method for forming a thin film transistor array panel, the method comprising:

• forming a gate line on a substrate;
• forming a gate insulating layer on the gate line;
• forming a semiconductor layer on the gate insulating layer;
• forming a data line, including a source electrode, and a drain electrode on the gate insulating layer or the semiconductor layer;
• and
• forming a pixel electrode connected to the drain electrode,
• wherein at least one of the gate line and the data line and drain electrode includes a first conductive layer made of a molybdenum Mo-niobium Nb alloy and a second conductive layer made of a copper Cu-containing metal,
• wherein the first and second conductive layers are etched with one etch condition, and
• wherein the etch condition is wet etching, and an etchant of the wet etching includes benzotriazole, citric acid, hydrogen peroxide, hydrofluoric acid, and deionized water.