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US 7,888,145 B2Granted
Method of manufacturing vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser device
AssigneeFurukawa Electric Co., Ltd.
InventorsKeishi Takaki, Norihiro Iwai, Hitoshi Shimizu, Takeo Kageyama
Life of this patent
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Abstract
A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
Claims12
A method of manufacturing a vertical-cavity surface-emitting laser having a selectively-oxidized current confinement layer, the method comprising:
- forming a selective oxidation layer by alternately growing, on a plurality of semiconductor layers including an active layer, at least two AlAs layers and an As-containing layer containing at least Ga or In such that the As-containing layer is interposed between the at least two AlAs layers and a thickness ratio of each of the at least two AlAs layers to the As-containing layer is in a range between 97:3 and 99:1;
- and
- selectively oxidizing the selective oxidation layer, wherein said selective oxidation layer has a thickness of less than 100 nm.
A vertical-cavity surface-emitting laser, comprising:
- a plurality of semiconductor layers including an active layer;
- and
- a selective oxidation layer on the plurality of semiconductor layers, the selective oxidation layer including at least two AlAs layers and an As-containing layer containing at least Ga or In interposed between the at least two AlAs layer with a thickness ratio of each of the at least two AlAs layers to the As-containing layer in a range between 97:3 and 99:1, wherein said selective oxidation layer has a thickness of less than 100 nm.
Dependencies are inferred from the claim text.