Fabricating method of nonvolatile semiconductor storage apparatus
AssigneeKabushiki Kaisha Toshiba
InventorsYukiteru Matsui, Takeo Kubota, Yoshikuni Tateyama, Hiroyuki Kanaya, Yoshihiro Minami
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Abstract
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
Claims14
A fabricating method of a nonvolatile semiconductor storage apparatus, the fabricating method comprising:
- accumulating a first electrode film, a ferroelectric film, and a second electrode film above a semiconductor substrate in this order;
- performing scrub cleaning on at least one of the first electrode film and the second electrode film with a surfactant;
- accumulating a hard mask above the second electrode film;
- performing scrub cleaning on a surface of the hard mask with a surfactant;
- patterning the hard mask on which scrub cleaning has been performed according to a planar shape of a ferroelectric capacitor;
- and
- forming the ferroelectric capacitor by performing etching by using as a mask the hard mask that has been patterned.
A fabricating method of a nonvolatile semiconductor storage apparatus, the fabricating method comprising:
- accumulating a first electrode film, a ferroelectric film, and a second ferroelectric film above a semiconductor substrate in this order;
- accumulating a hard mask above the second electrode film;
- removing a superficial layer of the hard mask by employing chemical-mechanical polishing;
- patterning the hard mask on which the chemical-mechanical polishing has been performed according to a planar shape of a ferroelectric capacitor;
- and
- forming the ferroelectric capacitor by performing etching by using as a mask the hard mask that has been patterned.
Dependencies are inferred from the claim text.