Positive resist composition and patterning process using the same
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Takanobu Takeda
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Abstract
The present invention provides a polymer, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance, suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition; a positive resist composition using the polymer; and a patterning process. The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).
Claims25
A positive resist composition, wherein the positive resist composition contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1):
- (In the formula, R1 and R2 each represent independently any of a linear, a branched, and a cyclic alkyl group having 1 to 6 carbon atoms, and a hydrogen atom;
- R3 represents a fluorenyl group or a fluorenylmethyl group).
Dependencies are inferred from the claim text.