Composition and method for low temperature deposition of silicon-containing films
AssigneeAdvanced Technology Materials, Inc.
InventorsZiyun Wang, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder
Life of this patent
Estimating the term…
Abstract
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
Claims8
A method of depositing a silicon-containing film on a substrate, comprising contacting the substrate with a composition comprising a disilane compound that is fully substituted with alkylamino (—NHR) and/or dialkylamino —N(R2)) functional groups, wherein each R is independently selected from consisting of C3-5 alkyl, under vapor deposition conditions.
Dependencies are inferred from the claim text.